Vishay
SI4842BDY-T1-E3 - Vishay - N-Channel 30 V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
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Product: SI4842BDY-T1-E3
Series: SI4
Description: N-Channel 30 V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
DC: mixed
RoHS compliant: Yes
Package: T&R
HTC: 8542.31.0001
Datasheet
Key Features and Benefits
High Efficiency: The N-Channel MOSFET technology offers high efficiency in power conversion and management.
Low Rds(On): With a drain-source resistance of just 4.2 mOhms, it ensures minimal power loss and heat generation.
High Current Capability: Supports continuous drain current up to 28 A, suitable for high-power applications.
Enhanced Gate Charge Performance: The 100 nC gate charge enhances switching performance, beneficial for frequency-sensitive applications.
Wide Operating Temperature Range: Reliable operation in a wide temperature range from -55°C to +150°C.
Compact Form Factor: The SOIC-8 package is ideal for space-constrained applications.
Advanced TrenchFET Technology: Offers improved performance in terms of switching speeds and power efficiency.
Versatile Applications: Suitable for a wide range of applications, including power supply, motor control, and more.
Technical Specifications
Manufacturer
Vishay
Product Category
MOSFET
RoHS
Details
Technology
Si
Mounting Style
SMD/SMT
Package/Case
SOIC-8
Transistor Polarity
N-Channel
Documentation
Datasheet